IL66B 查看數據表（PDF） - Infineon Technologies
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IL66B Datasheet PDF : 2 Pages
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FEATURES
• Internal RBE for High Stability
• High Current Transfer Ratio
at IF=2.0 mA, VCE=5.0 V
IL66B-1, 200% min.
IL66B-2, 750% min.
• Withstand Test Voltage, 5300 VRMS
• No Base Connection
• High Isolation Resistance
• Standard Plastic DIP Package
• Underwriters Lab Approval #E52744
•
V
DE
VDE 0884 Available with Option 1
DESCRIPTION
The IL66B is an optically coupled isolator
employing a Gallium Arsenide infrared emitter
and a silicon photodarlington detector. Switching
can be accomplished while maintaining a high
degree of isolation between driving and load cir-
cuits. They can be used to replace reed and mer-
cury relays with advantages of long life, high
speed switching and elimination of magnetic
fields.
Maximum Ratings (at 25°C)
Emitter
Peak Reverse Voltage .................................. 6.0 V
Continuous Forward Current ...................... 60 mA
Power Dissipation at 25°C....................... 100 mW
Derate Linearly from 55°C ................. 1.33 mW/°C
Detector
Collector-Emitter Breakdown Voltage........... 60 V
Emitter-Collector Breakdown Voltage........... 5.0 V
Power Dissipation at 25°C Ambient ........ 200 mW
Derate Linearly from 25°C ................... 2.6 mW/°C
Package
Isolation Test Voltage (t=1.0 sec.) ....... 5300 VRMS
Isolation Resistance
VIO=500 V, TA=25°C..............................≥1012 Ω
VIO=500 V, TA=100°C............................≥1011 Ω
Total Dissipation at 25°C ......................... 250 mW
Derate Linearly from 25°C ................... 3.3 mW/°C
Creepage Path ................................... 7.0 min mm
Clearance Path................................... 7.0 min mm
Storage Temperature................. –55°C to +150°C
Operating Temperature ............. –55°C to +100°C
Lead Soldering Time at 260°C .................. 10 sec.
IL66B
Photodarlington
Optocoupler
Dimensions in inches (mm)
321
pin one ID
.248 (6.30)
.256 (6.50)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
Anode 1
6 NC
4 56
.335 (8.50)
.343 (8.70)
.048 (0.45)
.022 (0.55)
Cathode 2
NC 3
5 Collector
4 Emitter
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
.031 (0.80) min. 3°–9°
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
18°
.010 (.25)
typ.
.300–.347
(7.62–8.81)
.114 (2.90)
.130 (3.0)
Electrical Characteristics (TA=25°C)
Symbol Min.
Emitter
Forward Voltage
VF
—
Reverse Current
IR
—
Capacitance
C0
—
Detector
Breakdown Voltage BVCEO 60
Collector-Emitter
Leakage Current
ICEO
—
Collector-Emitter
Package
Current Transfer Ratio CTR
IL66B-1
200
IL66B-2
750
Saturation Voltage
Collector-Emitter
VCEsat
—
Turn-On,
Turn-Off Time
ton, toff —
Typ.
1.25
0.01
25
—
1.0
1000
—
—
Max.
1.5
100
—
—
100
—
1.0
200
Unit
V
µA
pF
V
nA
%
V
µs
Condition
IF=10 mA
VR=3.0 V
VR=0 V
IC=100 µA,
IF=0
VCE=50 V,
IF=0
IF=2.0 mA,
VCE=5.0 V
IC=10 mA,
IF=10 mA
VCC=10 V
IF=2.0 mA,
RL=100 Ω
Infineon Technologies, Corp. • Optoelectronics Division • Cupertino, CA (formerly Siemens Microelectronics, Inc.)
www.infineon.com/opto • 1-800-777-4363
1
April 29, 1999
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