MTB50N06VLT4 查看數據表（PDF） - ON Semiconductor
零件编号
产品描述 (功能)
生产厂家
MTB50N06VLT4 Datasheet PDF : 10 Pages
| |||
MTB50N06VL
SAFE OPERATING AREA
1000 VGS = 20 V
SINGLE PULSE
TC = 25°C
100
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 μs
10
1
0.1
100 μs
1 ms
10 ms
dc
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
300
ID = 42 A
250
200
150
100
50
0
25
50
75
100
125
150
175
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
1.00
D = 0.5
0.2
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
0.01
1.0E−05
1.0E−04
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
1.0E−03
1.0E−02
1.0E−01
t, TIME (s)
Figure 13. Thermal Response
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RθJC(t)
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
tp
0.25 IS
IS
Figure 14. Diode Reverse Recovery Waveform
3
RθJA = 50°C/W
Board material = 0.065 mil FR−4
2.5
Mounted on the minimum recommended footprint
Collector/Drain Pad Size ≈ 450 mils x 350 mils
2.0
1.5
1
0.5
0
25
50
75
100
125
150
175
TA, AMBIENT TEMPERATURE (°C)
Figure 15. D2PAK Power Derating Curve
http://onsemi.com
6
Share Link: 