FZT1151A(1997) 查看數據表（PDF） - Diodes Incorporated.

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FZT1151A
(Rev.:1997)

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

Diodes Incorporated. 

PNP SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ISSUE 1 - JANUARY 1997

FZT1151A

FEATURES

* VCEO= -40V

* 3 Amp Continuous Current

* 5 Amp Pulse Current

* Low saturation Voltage

* High Gain

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

Power Dissipation at Tamb=25°C †

Operating and Storage Temperature

Range

SYMBOL

VCBO

VCEO

VEBO

ICM

IC

IB

Ptot

Tj:Tstg

C

VALUE

-45

-40

-5

-5

-3

-500

2.5

-55 to +150

E

C

B

SOT223

UNIT

V

V

V

A

A

mA

W

°C

† The power which can be dissipated assuming the device is mounted in a typical manner on

a P.C.B. with copper equal to 2 inches x 2 inches

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