IVN5000 查看數據表（PDF） - New Jersey Semiconductor
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IVN5000 Datasheet PDF : 2 Pages
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electrical characteristics (TA = 25° C) (unless otherwise specified)
CHARACTERISTIC
SYMBOL MIN
TYP
MAX
UNIT
off characteristics
Drain-Source Breakdown Voltage
(VGS = ov, ID.= 10 M) '
IVN5000.1AND BVDSS
40
IVNSOOO.IANE
60
—
IVN5000.1ANF
80
IVN5000.1ANH
100
Volts
—
Zero Gate Voltage Drain Current
(VDs = Max Rating, VGs = OV)
(VDS = Max Rating, * 0.8, VQS = OV, TA = 125°C)
•DSS
—
—
10
//A
500
Gate-Source Leakage Current
(VGs = 15V, VDS = ov)
(VGs = 15V, VDS = ov - TA = 125 °C)
IGSS
—
10
nA
^_
50
nA
on characteristics'
Gate Threshold Voltage
(VDs = VGS. ID = 1 rnA)
Drain-Source Saturation Voltage
(vGs = iov, iD = 1.0A)
(VGS= 12V, I D = 1.0A)
Static Drain-Source On-State Resistance
(VGS = iov, ID = 1.0A)
(VGs= 12V, I D = 1.0A)
On-State Drain Current
(VDs = 24V, VQS = 10V)
(VDs = 24V, VGS = 12V)
Forward Transconductance
(VDS = 24V, ID = 0.5A, f = 1 KHz)
IVN5000 VGS(TH)
.8
IVN5001
.8
(VNSOOO VDS(ON)
—
IVN5001
IVNSOOO RDS(ON)
—
IVN5001
—
2.0
Volts
3.6
Volts
2.0
2.5
1.9
2.5
Volts
2.0
2.5
Ohms
1.9
2.5
Ohms
IVNSOOO
IVNSOOI
iD(ON)
1.0
1.0
—
—
Amp
Amp
9fs
.17
.28
—
mhos
dynamic characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = OV
VDS = 24V
f = 1 MHz
switching characteristics"
Turn-on Delay Time
Rise Time
See switching times
waveform below
Turn-off Delay Time
Fall Time
Ciss
—
40
50
PF
coss
—
27
40
PF
Crss
—
6
10
PF
td(on)
—
2
5
ns
tr
—
2
5
ns
<d(off)
—
2
5
ns
tf
—
2
5
ns
'Pulse Test: Pulse width < 300 /js, duty cycle < 2%
INPUT
OUTPUT
SWITCHING TIME TEST WAVEFORMS
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