LET8180 查看數據表（PDF） - STMicroelectronics

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LET8180

RF POWER TRANSISTORS Ldmos Enhanced Technology

STMicroelectronics 

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

LET8180

RF POWER TRANSISTORS

Ldmos Enhanced Technology

TARGET DATA

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION,

PUSH-PULL

• POUT = 220 W with 17 dB TYP. gain @ 860 MHz

• BeO FREE PACKAGE

• INTERNAL INPUT MATCHING

• ESD PROTECTION

DESCRIPTION

The LET8180 is a common source N-Channel

enhancement-mode lateral Field-Effect RF power

transistor designed for broadband commercial and

industrial applications at frequencies up to 1.0

GHz. The LET8180 is designed for high gain and

broadband performance operating in common

source mode at 32 V. Its internal matching makes

it ideal for base station applications requiring high

linearity.

M252

epoxy sealed

ORDER CODE

LET8180

BRANDING

LET8180

PIN CONNECTION

1

2

3

5

4

ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)

Symbol

Parameter

V(BR)DSS Drain-Source Voltage

VGS

Gate-Source Voltage

ID

Drain Current

PDISS Power Dissipation (@ Tc =+70 °C)

Tj

Max. Operating Junction Temperature

TSTG

Storage Temperature

THERMAL DATA

Rth(j-c) Junction -Case Thermal Resistance

1. Drain

2. Drain

3. Source

4. Gate

5. Gate

Value

65

-0.5 to +15

18

289

200

-65 to +150

0.45

Unit

V

V

A

W

°C

°C

°C/W

January, 28 2003

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