LET8180 查看數據表（PDF） - STMicroelectronics
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LET8180 Datasheet PDF : 4 Pages
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LET8180
ELECTRICAL SPECIFICATION (TCASE = 25 °C)
STATIC (Per Section)
Symbol
V(BR)DSS VGS = 0 V
IDSS
VGS = 0 V
IGSS
VGS = 5 V
VGS(Q)
VDS = 32 V
VDS(ON) VGS = 10 V
GFS
VDS = 10 V
CISS*
VGS = 0 V
COSS
VGS = 0 V
CRSS
VGS = 0 V
* Includes Internal Input Moscap.
Test Conditions
ID = 10 µA
VDS = 32 V
VDS = 0 V
ID = TBD
ID = 3 A
ID = 3 A
VDS = 32 V
VDS = 32 V
VDS = 32 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
Symbol
Test Conditions
DYNAMIC (f = 860 MHz)
POUT(1) VDD = 32 V IDQ = TBD
ηD(1)
VDD = 32 V IDQ = TBD
GP(2)
VDD = 32 V IDQ = TBD POUT = 200 W PEP
IMD3(2) VDD = 32 V IDQ = TBD POUT = 200 W PEP
Load
VDD = 32 V IDQ = TBD POUT = 200 W
mismatch ALL PHASE ANGLES
DYNAMIC (f = 470 - 860 MHz)
POUT(1) VDD = 32 V IDQ = TBD
ηD(1)
VDD = 32 V IDQ = TBD
GP(1)
VDD = 32 V
(1) 1 dB Compression point
(2) f1 = 860 MHz, f2 = 860.1 MHz
IDQ = TBD
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Min. Typ. Max. Unit
65
V
10
µA
1
µA
2.5
4.5
V
0.28 0.45
V
2.6
mho
TBD
pF
70
pF
2.5
pF
Min. Typ. Max. Unit
200 220
50
60
16
17
-31
10:1
W
%
dB
dBc
VSWR
180
W
50
%
14.5
dB
Class
2
M3
2/4
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