LH28F004SUT-NC80 查看數據表（PDF） - Sharp Electronics

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LH28F004SUT-NC80

4M (512K × 8) Flash Memory

Sharp Electronics 

LH28F004SU-NC

4M (512K × 8) Flash Memory

FEATURES

• 512K × 8 Word Configuration

• 5 V Write/Erase Operation (5 V VPP)

– No Requirement for DC/DC Converter

to Write/Erase

• 80 ns Maximum Access Time

• 32 Independently Lockable Blocks (16K)

• 100,000 Erase Cycles per Block

• Automated Byte Write/Block Interface

– Command User Interface

– Status Register

– RY /» BY» Status Output

• System Performance Enhancement

– Erase Suspend for Read

– Two-Byte Write

– Full Chip Erase

• Data Protection

– Hardware Erase/Write Lockout during

Power Transitions

– Software Erase/Write Lockout

• Independently Lockable for Write/Erase

on Each Block (Lock Block and Protect

Set/Reset)

• 5 µA (Typ.) ICC in CMOS Standby

• 0.2 µA (Typ.) Deep Power-Down

• State-of-the-Art 0.45 µm ETOX™ Flash

Technology

• 40-Pin, 1.2 mm × 10 mm × 20 mm

TSOP (Type I) Package

40-PIN TSOP

TOP VIEW

A16

1

A15

2

A14

3

A13

4

A12

5

A11

6

A9

7

A8

8

WE 9

RP 10

VPP 11

RY/BY 12

A18 13

A7 14

A6 15

A5 16

A4 17

A3 18

A2 19

A1 20

40 A17

39 GND

38 NC

37 NC

36 A10

35 DQ7

34 DQ6

33 DQ5

32 DQ4

31 VCC

30 VCC

29 NC

28 DQ3

27 DQ2

26 DQ1

25 DQ0

24 OE

23 GND

22 CE

21 A0

28F004SUT-NC80-1

Figure 1. TSOP Configuration

1

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