LH28F004SUT-NC80 查看數據表（PDF） - Sharp Electronics
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LH28F004SUT-NC80 Datasheet PDF : 31 Pages
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LH28F004SU-NC
4M (512K × 8) Flash Memory
DC Characteristics
VCC = 5.0 V ± 0.5 V, TA = 0°C to +70°C
SYMBOL
PARAMETER
IIL
Input Load Current
TYP.
ILO Output Leakage Current
5
ICCS VCC Standby Current
1
ICCD
VCC Deep Power-Down
Current
0.2
ICCR1 VCC Read Current
ICCR2 VCC Read Current
13
ICCW VCC Write Current
18
ICCE VCC Block Erase Current 18
ICCES
VCC Erase Suspend
Current
5
IPPS VPP Standby Current
IPPD
VPP Deep Power-Down
Current
0.2
MIN.
MAX. UNITS
TEST CONDITIONS
NOTE
±1
µA VCC = VCC MAX., VIN = VCC or GND 1
±10
µA
VCC = VCC MAX., VIN = VCC or
GND
1
10
µA VCC = VCC MAX.,
CE », RP » = VCC ±0.2 V
1,4
4
mA VCC = VCC MAX.,
CE », RP » = VIH
5
µA RP» = GND ±0.2 V
1
VCC = VCC MAX.,
CMOS: CE » = GND ±0.2 V
60
mA
Inputs = GND ±0.2 V or VCC ±0.2 V 1, 3,
TTL: CE » = VIL
4
Inputs = VIL or VIH
f = 10 MHz, IOUT = 0 mA
VCC = VCC MAX.,
CMOS: CE » = GND ±0.2 V
30
mA
Inputs = GND ±0.2 V or VCC ±0.2 V 1, 3,
TTL: CE » = VIL
4
Inputs = VIL or VIH
f = 5 MHz, IOUT = 0 mA
35
mA
Byte/Two-Byte Serial Write
in Progress
1
25 mA Block Erase in Progress
1
10
mA
CE » = VIH
Block Erase Suspended
1, 2
±10
µA VPP ≤ VCC
1
5
µA RP» = GND ±0.2 V
1
20
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