LH28F004SUT-NC80 查看數據表（PDF） - Sharp Electronics

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LH28F004SUT-NC80

4M (512K × 8) Flash Memory

Sharp Electronics 

4M (512K × 8) Flash Memory

LH28F004SU-NC

PIN DESCRIPTION

SYMBOL

TYPE

NAME AND FUNCTION

A0 - A13 INPUT

WORD-SELECT ADDRESSES: Select a word within one 16K block. These addresses

are latched during Data Writes.

A14 - A18 INPUT

BLOCK-SELECT ADDRESSES: Select 1 of 32 Erase blocks. These addresses are

latched during Data Writes, Erase and Lock-Block operations.

DATA INPUT/OUTPUT: Inputs data and commands during CUI write cycles. Outputs

DQ0 - DQ7 INPUT/OUTPUT array, buffer, identifier or status data in the appropriate Read mode. Floated when

the chip is de-selected or the outputs are disabled.

CE »

INPUT

CHIP ENABLE INPUTS: Activate the device’s control logic, input buffers, decoders

and sense amplifiers. CE » must be low to select the device.

RP »

INPUT

RESET/POWER-DOWN: With RP » low, the device is reset, any current operation is

aborted and device is put into the deep power down mode. When the power is

turned on, RP » pin is turned to low in order to return the device to default config-

uration. When the power transition has occurred, or the power on/off, RP» » is

required to stay low in order to protect data from noise. When returning from Deep

Power-Down, a recovery time of 480 ns is required to allow these circuits to power-

up. When RP » goes low, any current or pending WSM operation(s) are terminated,

and the device is reset. All Status Registers return to ready (with all status flags

cleared). After returning, the device is in read array mode.

OE »

INPUT

OUTPUT ENABLE: Gates device data through the output buffers when low. The

outputs float to tri-state off when OE» is high.

WE

INPUT

WRITE ENABLE: Controls access to the CUI, Data Queue Registers and Address

Queue Latches. WE is active low, and latches both address and data (command

or array) on its rising edge.

RY »/BY »

OPEN DRAIN

OUTPUT

READY/BUSY: Indicates status of the internal WSM. When low, it indicates that the

WSM is busy performing an operation. When the WSM is ready for new operation or

Erase is Suspended, or the device is in deep power-down mode RY »/BY » pin is floated.

VPP

SUPPLY

ERASE/WRITE POWER SUPPLY (5.0 V ±0.5 V): For erasing memory array blocks or

writing words/bytes into the flash array.

VCC

GND

SUPPLY

SUPPLY

DEVICE POWER SUPPLY (5.0 V ±0.5 V): Do not leave any power pins floating.

GROUND FOR ALL INTERNAL CIRCUITRY: Do not leave any ground pins floating.

NC

NO CONNECT: No internal connection to die, lead may be driven or left floating.

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