CGY2032TS/C1 查看數據表（PDF） - Philips Electronics
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CGY2032TS/C1 Datasheet PDF : 12 Pages
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Philips Semiconductors
DECT 500 mW power amplifier
Product specification
CGY2032TS
PINNING
SYMBOL
VDD3
GND3
GND3
GND3
VDD2
GND2
GND2
VDD1
n.c.
GND1
RFI
GND3
GND3
GND3
OPM
RFO
PIN
DESCRIPTION
1
third stage supply voltage
2
third stage ground supply
3
third stage ground supply
4
third stage ground supply
5
second stage supply voltage
6
second stage ground supply
7
second stage ground supply
8
first stage supply voltage
9
not connected
10
first stage ground supply
11
PA input
12
third stage ground supply
13
third stage ground supply
14
third stage ground supply
15
output pre-matching
16
PA output
handbook, halfpage
VDD3 1
GND3 2
16 RFO
15 OPM
GND3 3
14 GND3
GND3 4
13 GND3
CGY2032TS
VDD2 5
12 GND3
GND2 6
11 RFI
GND2 7
10 GND1
VDD1 8
9 n.c.
MGK734
Fig.2 Pin configuration.
FUNCTIONAL DESCRIPTION
Amplifier
The CGY2032TS is a 3-stage GaAs power amplifier
capable of delivering 500 mW (typ.) at 1.9 GHz into a 50 Ω
load. Each amplifier stage has an open-drain
configuration. The drains have to be loaded externally by
adequate reactive circuits which must also provide a DC
path to the supply.
The amplifier can be switched off by means of a single
external PNP or PMOS series switch connected between
the battery and the amplifier drains.
This switch can also be used to vary the actual supply
voltage applied to the amplifier and hence, control the
output power.
This device is specifically designed to work with a duty
factor of 50% and can work up to 100% with good thermal
performance printed-circuit boards.
Biasing
Internal biasing is provided inside the amplifier for
class AB operation.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VDD
Tj(max)
Ptot
Pi
Tstg
operating supply voltage
maximum operating junction temperature
total power dissipation
input power
storage temperature
CONDITIONS
note 1
note 2
Notes
1. On Philips evaluation board.
2. On Philips evaluation board, Ptot maximum value is 800 mW.
MIN.
−
−
−
−
−55
MAX.
5.2
150
450
15
+125
UNIT
V
°C
mW
dBm
°C
1999 Jul 21
3
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