CGY2032TS/C1 查看數據表（PDF） - Philips Electronics

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CGY2032TS/C1

DECT 500 mW power amplifier

Philips Electronics 

Philips Semiconductors

DECT 500 mW power amplifier

Product specification

CGY2032TS

APPLICATION INFORMATION

The CGY2032TS is operated and tested in accordance with the circuit diagram shown in Fig.5. Supply voltage switching

is achieved by a single bipolar PNP transistor.

handbook, full pagewidth Vbat

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10 µF

220 Ω

10 kΩ

6.8 pF

47 kΩ

BC849C 10 nF

33 pF

BC807

VDD

22 pF

6.8 pF

TRL1(1)

VDD1

8

TRL2(2)

VDD2

5

TRL3(3)

VDD3

1

RFI

11

CGY2032TS

10

GND1

2, 3, 4

6, 7

12, 13, 14

GND2

GND3

RFO

16

15

OPM

TRL4(4)

1.2 pF

MGK736

Thickness: 0.8 mm; substrate: FR4; εr = 4.7.

(1) TRL1: width = 500 µm; length = 10 mm.

(2) TRL2: width = 500 µm; length = 3000 µm.

(3) TRL3: width = 500 µm; length = 7 mm.

(4) TRL4: adjusted for optimum matching; width = 500 µm; length = 1 to 3 mm.

Fig.5 Evaluation board circuit diagram.

1999 Jul 21

6

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