MC-4532CC726PF-A10 查看數據表（PDF） - Elpida Memory, Inc

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MC-4532CC726PF-A10

32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

Elpida Memory, Inc 

DATA SHEET

MOS INTEGRATED CIRCUIT

MC-4532CC726

32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE

UNBUFFERED TYPE

Description

The MC-4532CC726EF, MC-4532CC726PF and MC-4532CC726XF are 33,554,432 words by 72 bits synchronous

dynamic RAM module on which 18 pieces of 128M SDRAM: µPD45128841 are assembled.

This module provides high density and large quantities of memory in a small space without utilizing the surface-

mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

Features

• 33,554,432 words by 72 bits organization (ECC type)

• Clock frequency and access time from CLK

Part number

MC-4532CC726EF-A80

MC-4532CC726EF-A10

MC-4532CC726PF-A80

MC-4532CC726PF-A10

MC-4532CC726XF-A80

MC-4532CC726XF-A10

/CAS latency

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

Clock frequency

(MAX.)

125 MHz

100 MHz

100 MHz

77 MHz

125 MHz

100 MHz

100 MHz

77 MHz

125 MHz

100 MHz

100 MHz

77 MHz

Access time from CLK

(MAX.)

6 ns

6 ns

6 ns

7 ns

6 ns

6 ns

6 ns

7 ns

6 ns

6 ns

6 ns

7 ns

• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled by BA0 and BA1 (Bank Select)

• Programmable burst-length: 1, 2, 4, 8 and full page

• Programmable wrap sequence (Sequential / Interleave)

• Programmable /CAS latency (2, 3)

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• All DQs have 10 Ω ±10 % of series resistor

• Single 3.3 V ± 0.3 V power supply

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for

availability and additional information.

Document No. E0053N10 (1st edition)

(Previous No. M13680EJ6V0DS00)

Date Published January 2001 CP (K)

Printed in Japan

This product became EOL in September, 2002.

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

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