MC-4532CC726EF-A10 查看數據表（PDF） - Elpida Memory, Inc

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MC-4532CC726EF-A10

32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

Elpida Memory, Inc 

MC-4532CC726

Asynchronous Characteristics

Parameter

Symbol

-A 80

-A 10

MIN.

MAX.

MIN.

MAX.

ACT to REF/ACT command period (Operation)

tRC

70

70

REF to REF/ACT command period (Refresh)

tRC1

70

78

ACT to PRE command period

tRAS

48 120,000 50 120,000

PRE to ACT command period

tRP

20

20

Delay time ACT to READ/WRITE command

tRCD

20

20

ACT(one) to ACT(another) command period

tRRD

16

20

Data-in to PRE command period

tDPL

8

10

Data-in to ACT(REF) command period /CAS latency = 3 tDAL3 1CLK+20

1CLK+20

(Auto precharge)

/CAS latency = 2 tDAL2 1CLK+20

1CLK+20

Mode register set cycle time

tRSC

2

2

Transition time

tT

0.5

30

1

30

Refresh time (4,096 refresh cycles)

tREF

64

64

Unit

ns

ns

ns

ns

ns

ns

ns

ns

ns

CLK

ns

ms

Note

Data Sheet E0053N10

9

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