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M5M51016BRT-10VL 查看數據表(PDF) - MITSUBISHI ELECTRIC

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M5M51016BRT-10VL Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
9 Jul ,1997
MITSUBISHI LSIs
M5M51016BTP,RT-10VL,
-10VLL
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
POWER DOWN CHARACTERISTICS
(1) ELECTRICAL CHARACTERISTICS
o
(Ta = 0 ~ 70 C, unless otherwise noted)
Symbol
VCC (PD)
Parameter
Power down supply voltage
Test conditions
Limits
Min Typ Max
Unit
2
V
VI (BC)
VI (CS)
Byte control input BC1 & BC2
Chip select input CS
ICC (PD) Power down supply current
Note7. ICC (PD) = 1µA in case of Ta = 25 oC
2.0
V
3.0V < VCC(PD)
VCC(PD) < 3.0V
VCC = 3V
1) CS < 0.2V
other inputs = 0 ~ 3V
2) BC1 & BC2 > Vcc 0.2V,
CS > VCC 0.2V,other inputs=0~3V
-VL
-VLL
0.6
0.2
V
50
µA
0.3
10
(Note 7)
(2) TIMING REQUIREMENTS (Ta = 0 ~ 70 oC, unless otherwise noted )
Symbol
tsu (PD)
trec (PD)
Parameter
Power down set up time
Power down recovery time
Test conditions
Limits
Min Typ Max
Unit
0
ns
5
ms
(3) POWER DOWN CHARACTERISTICS
BC control mode
VCC
BC1 & BC2
CS control mode
VCC
CS
2.0V
t su (PD)
3.0V
3.0V
t rec (PD)
BC1 & BC2 > VCC 0.2V
2.0V
0.2V
t su (PD)
3.0V
3.0V
t rec (PD)
CS < 0.2V
0.2V
MITSUBISHI
ELECTRIC
7

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