MGSF3442VT1 查看數據表（PDF） - ON Semiconductor
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MGSF3442VT1 Datasheet PDF : 8 Pages
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MGSF3442VT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µA)
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 70°C)
Gate−Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Static Drain−to−Source On−Resistance
(VGS = 4.5 Vdc, ID = 4.0 A)
(VGS = 2.5 Vdc, ID = 3.4 A)
V(BR)DSS
20
IDSS
−
−
IGSS
−
VGS(th)
0.6
rDS(on)
−
−
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 5.0 V)
(VDS = 5.0 V)
(VDG = 5.0 V)
Ciss
−
Coss
−
Crss
−
SWITCHING CHARACTERISTICS (Note 2.)
Turn−On Delay Time
td(on)
−
Rise Time
Turn−Off Delay Time
(VDD = 10 Vdc, ID = 1.0 A,
VGEN = 10 V, RL = 10 Ω)
tr
−
td(off)
−
Fall Time
tf
−
Gate Charge
QT
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
−
Pulsed Current
ISM
−
Forward Voltage (Note 2.)
VSD
−
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
Vdc
−
−
µAdc
−
1.0
−
5.0
−
±100
nAdc
−
0.058
0.072
−
0.070
0.095
Vdc
Ohms
90
−
pF
50
−
10
−
8.0
20
ns
24
40
36
60
10
20
−
−
nC
−
1.0
A
−
5.0
A
−
1.2
V
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