MGSF1N03LT1G(2012) 查看數據表（PDF） - ON Semiconductor
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MGSF1N03LT1G Datasheet PDF : 5 Pages
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MGSF1N03L, MVGSF1N03L
TYPICAL ELECTRICAL CHARACTERISTICS
0.24
0.19 VGS = 4.5 V
0.14
0.09
150°C
25°C
-55°C
0.04
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
0.16
0.14
VGS = 10 V
0.12
150°C
0.1
25°C
0.08
-55°C
0.06
0.04
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
1.8
1.6
VGS = 10 V
1.4
ID = 2 A
1.2
VGS = 4.5 V
1
ID = 1 A
0.8
0.6
0.4
0.2
0
- 55 - 25
0 25 50 75 100
TJ, JUNCTION TEMPERATURE (°C)
125 150
Figure 5. On−Resistance Variation with Temperature
10
VDS = 24 V
TJ = 25°C
8
6
4
ID = 2.0 A
2
0
0
1000 2000 3000 4000 5000 6000
QT, TOTAL GATE CHARGE (pC)
Figure 6. Gate Charge
1
TJ = 150°C
25°C -55°C
0.1
0.01
0.001
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
350
300
250
200
150
100
50
0
0
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3
VGS = 0 V
f = 1 MHz
TJ = 25°C
Ciss
Coss
Crss
4
8
12
16
20
VDS, DRAIN-TO-SOURCE VOLTAGE (Volts)
Figure 8. Capacitance
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