MHPM7A15S120DC3 查看數據表（PDF） - Motorola => Freescale

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MHPM7A15S120DC3

Hybrid Power Module

Motorola => Freescale 

MHPM7A15S120DC3

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

DC AND SMALL SIGNAL CHARACTERISTICS

Input Rectifier Forward Voltage (IF = 15 A)

Gate–Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V)

Collector–Emitter Leakage Current (VCE = 1200 V, VGE = 0 V)

Gate–Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)

Collector–Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V)

Collector–Emitter Saturation Voltage (IC = ICmax, VGE = 15 V)

Free–Wheeling Diode Forward Voltage (IF = IFmax, VGE = 0 V)

Input Capacitance (VGE = 0 V, VCE = 25 V, f = 1.0 MHz)

Input Gate Charge (VCE = 600 V, IC = ICmax, VGE = 15 V)

THERMAL CHARACTERISTICS, EACH DIE

Thermal Resistance — IGBT

Thermal Resistance — Free–Wheeling (Fast Soft) Diode

Thermal Resistance — Input Rectifier

TEMPERATURE SENSE DIODE

Forward Voltage (@ IF = 1.0 mA)

Forward Voltage Temperature Coefficient (@ IF = 1.0 mA)

Symbol

Min

Typ

Max

Unit

VF

—

1.09

1.38

V

IGES

—

—

±20

mA

ICES

—

5.0

100

mA

VGE(th)

4.0

6.0

8.0

V

V(BR)CES

1200

—

—

V

VCE(sat)

—

2.5

3.5

V

VF

1.8

2.0

2.5

V

Cies

—

2800

—

pF

QT

—

100

—

nC

RqJC

RqJC

RqJC

—

1.1

1.5

°C/W

—

2.4

3.3

°C/W

—

3.2

4.2

°C/W

VF

TCVF

1.983

—

2.024

–8.64

2.066

—

V

mV/°C

2

Motorola IGBT Device Data

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