MJD31 查看數據表（PDF） - ON Semiconductor
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MJD31 Datasheet PDF : 11 Pages
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MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,
MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G
MJD31C, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G
Symbol
VCEO
Max
40
100
Unit
Vdc
Collector−Base Voltage
MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G
MJD31C, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G
VCB
Vdc
40
100
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
VEB
5.0
Vdc
IC
3.0
Adc
ICM
5.0
Adc
IB
1.0
Adc
PD
W
15
W/°C
0.12
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
PD
W
1.56
W/°C
0.012
Operating and Storage Junction Temperature Range
ESD − Human Body Model
TJ, Tstg
−65 to + 150
°C
HBM
3B
V
ESD − Machine Model
MM
C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may
affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient*
Lead Temperature for Soldering Purposes
RqJC
8.3
RqJA
80
TL
260
*These ratings are applicable when surface mounted on the minimum pad sizes recommended.
Unit
°C/W
°C/W
°C
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