MJD41C 查看數據表（PDF） - TY Semiconductor

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MJD41C

Complementary Power Transistors

TY Semiconductor 

Product specification

MJD41C(NPN)

MJD42C(PNP)

Features

Lead Formed for Surface Mount Applications in Plastic Sleeves

Monolithic Construction With Built?in Base ? Emitter Resistors

Pb-Free Packages are Available

TO-252

6.50+0.15

-0.15

5.30+0.2

-0.2

2.30+0.1

-0.1

0.50+0.8

-0.7

0.80+0.1

-0.1

0.127

max

2.3

4.60+0.15

-0.15

0.60+0.1

-0.1

Absolute Maximum Ratings Ta = 25

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Collector current (pulse)

Base current

Total Device Dissipation FR-5 Board

@TA = 25

Derate above 25

Total Device Dissipation Alumina Substrate

@TA = 25

Derate above 25

Junction temperature

Storage temperature

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Symbol

VCEO

VCB

VEB

IC

ICP

IB

PD

PD

Tj

Tstg

RèJC

RèJA

Rating

100

100

5

6

10

2

20

0.16

1.75

0.014

150

-65 to +150

6.25

71.4

Unit

V

V

V

A

A

A

W

W/

W

W/

/W

/W

Unit: mm

1 Base

2 Collector

3 Emitter

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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