MJD41C 查看數據表（PDF） - Inchange Semiconductor

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MJD41C

Silicon NPN Power Transistors

Inchange Semiconductor 

isc Silicon NPN Power Transistors

INCHANGE Semiconductor

MJD41C

DESCRIPTION

·DC Current Gain -hFE = 30(Min)@ IC= 0.3A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = 100V(Min)

·Complement to Type MJD42C

·DPAK for Surface Mount Applications

·Minimum Lot-to-Lot variations for robust device performance

and reliable operation

APPLICATIONS

·Designed for use in general purpose amplifer and low speed

switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

6

A

ICM

Collector Current-Peak

10

A

IB

Base Current

Collector Power Dissipation

TC=25℃

PC

Collector Power Dissipation

Ta=25℃

Tj

Junction Temperature

2

A

20

W

1.75

150

℃

Tstg

Storage Temperature Range

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance,Junction to Case

6.25 ℃/W

Rth j-a Thermal Resistance,Junction to Ambient 71.4 ℃/W

isc website： www.iscsemi.com

1 isc & iscsemi is registered trademark

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