MJD41C 查看數據表（PDF） - Inchange Semiconductor
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MJD41C Datasheet PDF : 3 Pages
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isc Silicon NPN Power Transistors
INCHANGE Semiconductor
MJD41C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A
VBE(on) Base-Emitter On Voltage
IC= 6A; VCE= 4V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
ICEO
Collector Cutoff Current
VCE= 60V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.3A ; VCE= 4V
hFE-2
DC Current Gain
IC= 3A ; VCE= 4V
fT
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 10V
Switching Time
ton
Turn-On Time
toff
Turn-Off Time
IC= 6A; IB1= -IB2= 0.6A;
VBE(off)= 4V, RL= 5Ω
MIN MAX UNIT
100
V
1.5
V
2.0
V
10
uA
50
uA
0.5
mA
30
15
75
3
MHz
0.6
μs
1.0
μs
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