MMBTA42-AE3-R(2005) 查看數據表（PDF） - Unisonic Technologies

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MMBTA42-AE3-R
(Rev.:2005)

HIGH VOLTAGE RANSISTOR

Unisonic Technologies 

MMBTA42

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

300

V

Collector-Emitter Voltage

VCEO

300

V

Emitter-Base Voltage

Collector Dissipation (TA=25℃)

VEBO

6

V

PC

350

mW

Collector Current

Junction Temperature

Storage Temperature

IC

500

mA

TJ

+150

℃

TSTG

-55 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (TJ=25℃, unless otherwise specified)

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Current Gain Bandwidth Product

Collector Base Capacitance

SYMBOL

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

ICBO

IEBO

hFE

fT

Ccb

TEST CONDITIONS

Ic=100μA, IE=0

Ic=1mA, IB=0

IE=100μA, Ic=0

Ic=20mA, IB=2mA

Ic=20mA, IB=2mA

VCB=200V, IE=0

VBE=6V, Ic=0

VCE=10V, Ic=1mA

VCE=10V, Ic=10mA

VCE=10V, Ic=30mA

VCE=20V, Ic=10mA, f=100MHz

VCB=20V, IE=0, f=1MHz

MIN TYP MAX UNIT

300

V

300

V

6

V

0.2

V

0.90 V

100 nA

100 nA

80

80

300

80

50

MHz

3

pF

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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