MMBTA14 查看數據表（PDF） - Unisonic Technologies

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MMBTA14

DARLINGTON TRANSISTOR

Unisonic Technologies 

MMBTA14

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCES

30

V

Emitter-Base Voltage

Collector Dissipation (TC=25°C)

VEBO

PC

10

V

350

mW

Collector Current

Junction Temperature

Storage Temperature

IC

TJ

TSTG

500

mA

+150

°C

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

Collector-Emitter Breakdown Voltage BVCES

Collector CutOff Current

ICBO

Emitter CutOff Current

IEBO

DC Current Gain

hFE

Collector-Emitter Saturation Voltage

VCE(SAT)

Base-Emitter on Voltage

VBE(ON)

Current Gain Bandwidth Product

fT

Note: Pulse Width<300µs, Duty Cycle≤2%

TEST CONDITIONS

IC=100µA, IB=0

VCB=30V, IE=0

VEB=10V, IC=0

VCE=5V, IC=100 mA (Note)

IC=100mA, IB=0.1mA (Note)

VCE=5V, IC=100mA (Note)

VCE=5V, IC=10mA, f=100MHz

MIN TYP

30

20000

125

MAX UNIT

V

100 nA

100 nA

1.5 V

2.0 V

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R206-038.B

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