MMSF2P02E 查看數據表（PDF） - ON Semiconductor
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MMSF2P02E Datasheet PDF : 9 Pages
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100
VDD = 10 V
ID = 2 A
VGS = 10 V
TJ = 25°C
MMSF2P02E
2
TJ = 25°C
VGS = 0 V
1.6
1.2
td(off)
0.8
tr
tf
0.4
td(on)
10
0
1
10
100
0.6
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
0.8
1
1.2
1.4
1.6
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage
versus Current
di/dt = 300 A/μs
Standard Cell Density
trr
High Cell Density
trr
tb
ta
t, TIME
Figure 11. Reverse Recovery Time (trr)
100
VGS = 20 V
SINGLE PULSE
TC = 25°C
10
Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″
thick single sided), 10s max.
1 ms
10 ms
1
dc
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
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5
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