MSAEZ33N20A 查看數據表（PDF） - Microsemi Corporation
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MSAEZ33N20A Datasheet PDF : 2 Pages
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MSAEZ33N20A
MSAFZ33N20A
Electrical Parameters @ 25°C (unless otherwise specified)
DESCRIPTION
Drain-to-Source Breakdown Voltage
(Gate Shorted to Source)
Temperature Coefficient of the Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Current
Drain-to-Source Leakage Current (Zero Gate
Voltage Drain Current)
Static Drain-to-Source On-State Resistance (1)
Forward Transconductance (1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Body Diode Forward Voltage (1)
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
SYMBOL
BVDSS
∆BVDSS/∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
Td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
VSD
trr
Qrr
CONDITIONS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 1 mA
VGS = ± 20VDC, VDS = 0 TJ = 25°C
T J = 125°C
VDS =0.8•BVDSS
TJ = 25°C
VGS = 0 V
T J = 125°C
VGS= 10V, ID= 21A T J = 25°C
I D= 33A T J = 25°C
I D= 21A T J = 125°C
VDS ≥ 15 V; ID = 21 A
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, V DS = 30 V,
ID = 3 A, R G = 50 Ω
VGS = 10 V, V DS = 160V, I D = 50A
IF = IS, VGS = 0 V
IF = 10 A,
-di/dt = 100 A/ µs,
IF = 10 A,
di/dt = 100 A/ µs,
MSAE
MSAF
MSAE
MSAF
MSAE
MSAF
MIN TYP.
200
TBD
2.0
3.0
0.06
TBD
0.11
15
23
2600
500
230
40
110
450
160
120
10
70
1.3
MAX
4.0
±100
±200
25
250
0.07
UNIT
V
V/°C
V
nA
µA
Ω
S
3900
pF
750
350
60
ns
170
680
240
nC
1.2
V
1.6
50
ns
230
tbd
µC
1.8
Notes
(1) Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2%
(2) Microsemi Corp. does not manufacture the mosfet die; contact company for details.
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