MMBFJ177LT1 查看數據表（PDF） - ON Semiconductor
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MMBFJ177LT1 Datasheet PDF : 4 Pages
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ON Semiconductort
JFET Chopper
P–Channel – Depletion
MMBFJ177LT1
MAXIMUM RATINGS
Rating
Drain–Gate Voltage
Reverse Gate–Source Voltage
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBFJ177LT1 = 6Y
Symbol
VDG
VGS(r)
Value
25
–25
Symbol
PD
RqJA
TJ, Tstg
Max
225
1.8
556
–55 to +150
Unit
Vdc
Vdc
Unit
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(VDS = 0, ID = 1.0 µAdc)
Gate Reverse Current
(VDS = 0 Vdc, VGS = 20 Vdc)
Gate Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(2)
(VGS = 0, VDS = 15 Vdc)
Drain Cutoff Current
(VDS = 15 Vdc, VGS = 10 Vdc)
Drain Source On Resistance
(ID = 500 µAdc)
Input Capacitance
Reverse Transfer Capacitance
VDS = 0, VGS = 10 Vdc
f = 1.0 MHz
1. FR–5 = 1.0 0.75 0.062 in.
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle ≤ 2%.
Symbol
V(BR)GSS
IGSS
VGS(off)
IDSS
ID(off)
rDS(on)
Ciss
Crss
3
1
2
CASE 318–08, STYLE 10
SOT–23 (TO–236AB)
3
GATE
2 SOURCE
1 DRAIN
Min
Max
Unit
30
–
Vdc
–
1.0
nAdc
0.8
2.5
Vdc
1.5
20
mAdc
–
1.0
nAdc
–
300
Ω
–
11
pF
–
5.5
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 2
Publication Order Number:
MMBFJ177LT1/D
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