NDT014 查看數據表（PDF） - Fairchild Semiconductor
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NDT014 Datasheet PDF : 10 Pages
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September 1996
NDT014
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
Power SOT N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as DC motor control
and DC/DC conversion where fast switching, low in-line power
loss, and resistance to transients are needed.
2.7A, 60V. RDS(ON) = 0.2Ω @ VGS = 10V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
_________________________________________________________________________________________________________
D
D
G
D
S
G
S
Absolute Maximum Ratings
Symbol Parameter
TA = 25°C unless otherwise noted
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Drain Current - Continuous
- Pulsed
PD
Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
* Order option J23Z for cropped center drain lead.
(Note 1a)
(Note 1)
© 1997 Fairchild Semiconductor Corporation
NDT014
60
±20
±2.7
±10
3
1.3
1.1
-65 to 150
42
12
Units
V
V
A
W
°C
°C/W
°C/W
NDT014 Rev. C1
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