NDT014 查看數據表（PDF） - Fairchild Semiconductor

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NDT014

N-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol Parameter

Conditions

OFF CHARACTERISTICS

BVDSS

IDSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

IGSSF

Gate - Body Leakage, Forward

IGSSR

Gate - Body Leakage, Reverse

ON CHARACTERISTICS (Note 2)

VGS = 0 V, ID = 250 µA

VDS = 60 V, VGS = 0 V

VDS = 48 V, VGS = 0 V, TJ=125°C

VGS = 20 V, VDS = 0 V

VGS = -20 V, VDS= 0 V

VGS(th)

RDS(ON)

Gate Threshold Voltage

Static Drain-Source On-Resistance

VDS = VGS, ID = 250 µA

VGS = 10 V, ID = 1.6 A

gFS

Forward Transconductance

DYNAMIC CHARACTERISTICS

VDS = 25 V, ID = 1.6 A

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 2)

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

tD(on)

Turn - On Delay Time

tr

Turn - On Rise Time

tD(off)

Turn - Off Delay Time

tf

Turn - Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDD =30 V, ID = 10 A,

VGEN = 10 V, RGEN = 24 Ω

VDS = 48 V,

ID = 10 A, VGS = 10 V

Min Typ Max Units

60

V

25 µA

250 µA

100 nA

-100 nA

2

3

4

V

0.18 0.2 Ω

2

S

155

pF

60

pF

15

pF

10

20

ns

64 100 ns

10 20 ns

10 20 ns

5

11 nC

1.2 3.1 nC

2 5.8 nC

NDT014 Rev. C1

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