NDT014 查看數據表（PDF） - Fairchild Semiconductor

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NDT014

N-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

Typical Electrical Characteristics (continued)

1.15

I D = 250µA

1.1

1.05

1

0.95

0.9

-50

-25

0

25

50

75

100 125 150

TJ , JUNCTION TEMPERATURE (°C)

Figure 7. Breakdown Voltage Variation with

Temperature.

10

5 V GS = 0V

1

0.5

TJ = 125°C

0.1

0.01

25°C

-55°C

0.001

0.2

0.4

0.6

0.8

1

1.2

1.4

VSD , BODY DIODE FORWARD VOLTAGE (V)

Figure 8. Body Diode Forward Voltage Variation with

Current and Temperature.

400

300

200

C iss

100

C oss

50

30

f = 1 MHz

20

VGS = 0V

C rss

10

0.1 0.2

0.5

1

2

5

10

20

50

VDS , DRAIN TO SOURCE VOLTAGE (V)

Figure 9. Capacitance Characteristics.

15

ID = 2.7A

12

V = 10V

DS

20V

40V

9

6

3

0

0

1

2

3

4

5

6

Q g , GATE CHARGE (nC)

Figure 10. Gate Charge Characteristics.

VIN

VGS

RGEN

G

VDD

RL

D

V OUT

DUT

S

Figure 11. Switching Test Circuit.

t d(on)

t on

tr

90%

td(off)

toff

tf

90%

VO U T

VIN

10%

10%

50%

10%

90%

INVERTED

50%

PULSE WIDTH

Figure 12. Switching Waveforms.

NDT014 Rev. C1

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