NDT014L 查看數據表（PDF） - Fairchild Semiconductor

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NDT014L

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol Parameter

Conditions

OFF CHARACTERISTICS

BVDSS

IDSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

VGS = 0 V, ID = 250 µA

VDS = 60 V, VGS = 0 V

IGSSF

Gate - Body Leakage, Forward

IGSSR

Gate - Body Leakage, Reverse

ON CHARACTERISTICS (Note 2)

VGS(th)

Gate Threshold Voltage

VGS = 20 V, VDS = 0 V

VGS = -20 V, VDS= 0 V

VDS = VGS, ID = 250 µA

RDS(ON)

Static Drain-Source On-Resistance

VGS= 4.5 V, ID = 2.8 A

ID(on)

On-State Drain Current

GFS

Forward Transconductance

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 2)

tD(on)

Turn - On Delay Time

tr

Turn - On Rise Time

tD(off)

Turn - Off Delay Time

tf

Turn - Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VGS = 10 V, ID = 3.4 A

VGS = 4.5 V , VDS = 5 V

VGS = 10 V, VDS = 5 V

VGS = 5 V, ID = 2.8 A

VDS = 30 V, VGS = 0 V,

f = 1.0 MHz

VDD = 30 V, ID = 3 A,

VGEN = 10 V, RGEN = 12 Ω

VDS = 10 V,

ID = 2.8 A, VGS = 4.5 V

Min Typ Max Units

60

TJ = 55°C

V

25

µA

250 µA

100 nA

-100 nA

1

1.5

3

V

TJ = 125°C 0.8 1.1

2

0.17 0.2

Ω

TJ = 125°C

0.22 0.36

0.12 0.16

5

A

10

4.2

S

214

pF

70

pF

27

pF

6

12

ns

14

25

ns

15

28

ns

10

18

ns

3.6

5

nC

0.8

nC

1.4

nC

NDT014L Rev.D

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