NIS5135 查看數據表（PDF） - Diodes Incorporated.
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NIS5135 Datasheet PDF : 13 Pages
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NOT RECOMMENDED FOR NEW DESIGN
NO ALTERNATE PART
NIS5135
Electrical Characteristics (VDD = 5V, CL = 70µF, dv/dt pin open, RLIMIT = 10, and TA = +25°C, unless otherwise noted.)
Symbol
Characteristic
Test Condition
Min
Device
IBIAS
Bias Current
Device Operational
—
IBIAS_SD Bias Current during Shutdown
Device Shutdown
—
Minimum Operating Voltage Once
VDD_MIN Successfully Started Up
—
—
NMOS Power Device
tDLY
Chip Enable Dealy Time
Enabling of the IC to ID = 100mA
—
(with 1A resistive load)
NMOS Drain to Source Kelvin ON
NMOS fully on
20
RDS(ON) Resistance (Note 8)
NMOS fully on, TJ = +140°C
—
VOUT_OFF Off State Output Voltage
VDD = 10V, VGS = 0V, RL = ∞
—
TA = +25°C, 0.5 in.2 pad
—
ID
Continuous Current (Note 9)
TA = +80°C, min copper
—
—
Output Capacitance
VDS = 12V, VGS = 0V, f = 1MHz
—
dv/dt Ramp
tSLEW Output Voltage Ramp Time
Device enable to VDS = 11.7V
0.7
VC_MAX Maximum Capacitor Voltage
—
—
Under/Overvoltage Protection
VUVLO Undervoltage Lockout Threshold
Turn on, Voltage rising
3.2
VUVLO_HYST Undervoltage Lockout Hysteresis
VCLAMP Overvoltage Clamp Limit (Note 10)
Current Limit
—
During over voltage protection,
VDD = 18V
—
5.95
Kelvin Short Circuit Current Limit
ILIMIT_SS (Note 11)
RLIMIT = 11Ω
2.3
Kelvin Over Load Current Limit
ILIMIT_OL (Note 11)
RLIMIT = 11Ω
—
Thermal Protection
TSD
Thermal Shutdown Junction Temperature
Threshold (Note 9)
Temperature rising
+150
Thermal Shutdown Hysteresis in Non
TSD_HYST Latching Devices
—
—
Enable/Fault
VEN_LOW Enable Logic Level Low Voltage
Output disabled
0.35
VEN_MID Enable Logic Level Mid Voltage
Output disabled, Thermal fault
0.82
VEN_HI Enable Logic Level High
Output enabled
1.96
VEN_MAX High State Maximum Voltage
—
3.4
IEN_SINK Logic Low Sink Current
VENABLE = 0V
—
Logic High Leakage Current for External
IEN_LKG Switch
VENABLE = 3.3V
—
Maximum Fanout – Number of device that
Fanout can be connected together to this pin for —
—
simultaneous shutdown
Notes:
8. Pulse test with pulse width of 300µs, duty cycle 2%.
9. This parameter is not tested in production. It is guaranteed by design, process control and characterization.
10. Overvoltage clamp feature is available on in NIS5135MN1 and NIS5135MN2 versions.
11. Refer to application note on explanation on short circuit and overload conditions.
Typ
0.8
0.4
—
220
30
45
0.05
3.6
1.7
230
1.4
—
3.6
0.40
6.65
3.1
3.5
+175
+45
0.58
1.4
2.64
4.3
-12
—
—
Max
1.5
—
3.1
—
40
—
0.2
—
—
—
2.4
VDD
4.0
—
7.35
4.4
—
+200
—
0.81
1.95
3.3
5.3
-20
1.0
3.0
Unit
mA
mA
V
µs
mΩ
V
A
pF
ms
V
V
V
V
A
A
C
C
V
V
V
V
µA
µA
Units
NIS5135
Document number: DS37968 Rev. 4 - 3
6 of 13
www.diodes.com
May 2017
© Diodes Incorporated
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