NTP30N06LG 查看數據表（PDF） - ON Semiconductor
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NTP30N06LG Datasheet PDF : 8 Pages
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NTP30N06L, NTB30N06L
2800
2400
VDS = 0 V
2000 Ciss
1600
VGS = 0 V
TJ = 25°C
1200 Crss
800
400
Ciss
Coss
Crss
0
10
5 VGS 0 VDS 5
10
15
20
25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Figure 7. Capacitance Variation
1000
tr
100
tf
6
5
Q1
4
3 VGS
QT
Q2
2
1
ID = 30 A
TJ = 25°C
0
0
4
8
12
16
20
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
32
VGS = 0 V
TJ = 25°C
24
16
10
td(off)
td(on)
1
1
VDS = 30 V
ID = 30 A
VGS = 5 V
10
100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
1000
100
TC = 25°C
TJ = 175°C
SINGLE PULSE
8
0
0.6
0.68 0.76 0.84 0.92
1
1.08
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus
Current
120
ID = 26 A
100
80
10
10 ms
1 ms 100 ms
1
0.1
0.1
RDS(on) Limit
Thermal Limit
Package Limit
1
10 ms
dc
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
60
40
20
0
25
50
75
100
125
150
175
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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