NTD4806N-35G(2014) 查看數據表（PDF） - ON Semiconductor
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NTD4806N-35G Datasheet PDF : 8 Pages
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NTD4806N, NVD4806N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (continued)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
8.5
ns
23.8
26
4.7
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
VSD
VGS = 0 V,
TJ = 25°C
IS = 30 A
TJ = 125°C
tRR
ta
VGS = 0 V, dIs/dt= 100 A/ms,
tb
IS = 30 A
0.9
1.2
V
0.8
26
ns
13
13
Reverse Recovery Time
QRR
PACKAGE PARASITIC VALUES
16
nC
Source Inductance
LS
2.49
nH
Drain Inductance, DPAK
LD
0.0164
Drain Inductance, IPAK
LD
TA = 25°C
1.88
Gate Inductance
LG
3.46
Gate Resistance
RG
1.0
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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