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NTD20N03L27 Datasheet PDF : 6 Pages
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NTD20N03L27, NVD20N03L27
MOSFET –Power,
N-Channel, DPAK
20 A, 30 V
This logic level vertical power MOSFET is a general purpose part
that provides the “best of design” available today in a low cost power
package. Avalanche energy issues make this part an ideal design in.
The drain−to−source diode has a ideal fast but soft recovery.
Features
• Ultra−Low RDS(on), Single Base, Advanced Technology
• SPICE Parameters Available
• Diode is Characterized for use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperatures
• High Avalanche Energy Specified
• ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0
• NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Power Supplies
• Inductive Loads
• PWM Motor Controls
• Replaces MTD20N03L in many Applications
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MW)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25_C
− Continuous @ TA = 100_C
− Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25_C
Derate above 25°C
Total Power Dissipation @ TC = 25°C (Note 1)
Operating and Storage Temperature Range
VDSS
30
Vdc
VDGR
30
Vdc
Vdc
VGS
±20
VGS
±24
ID
ID
IDM
PD
TJ, Tstg
20
16
60
74
0.6
1.75
−55 to
150
Adc
Apk
W
W/°CW
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 5 Vdc, L = 1.0 mH,
IL(pk) = 24 A, VDS = 34 Vdc)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 1)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
EAS
RqJC
RqJA
RqJA
TL
288
mJ
°C/W
1.67
100
71.4
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
http://onsemi.com
20 A, 30 V, RDS(on) = 27 mW
N−Channel
D
G
S
4
12
3
DPAK
CASE 369C
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENTS
4
Drain
1
Gate
2
Drain
3
Source
A
= Assembly Location*
20N3L = Device Code
Y
= Year
WW = Work Week
G
= Pb−Free Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
May, 2019 − Rev. 6
Publication Order Number:
NTD20N03L27/D
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