NVTA7002N(2012) 查看數據表（PDF） - ON Semiconductor

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NVTA7002N
(Rev.:2012)

Small Signal MOSFET 30 V, 154 mA, Single, N−Channel, Gate ESD Protection, SC−75

ON Semiconductor 

NTA7002N, NVTA7002N

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Zero Gate Voltage Drain Current

Zero Gate Voltage Drain Current

V(BR)DSS

VGS = 0 V, ID = 100 mA

30

IDSS

VGS = 0 V, VDS = 30 V

IDSS

VGS = 0 V, VDS = 20 V,

T = 85 °C

V

1.0 mA

1.0 mA

Gate−to−Source Leakage Current

Gate−to−Source Leakage Current

Gate−to−Source Leakage Current

IGSS

IGSS

IGSS

VDS = 0 V, VGS = ±10 V

VDS = 0 V, VGS = ±5 V

VDS = 0 V, VGS = ±5 V

T = 85 °C

±25 mA

±1.0 mA

±1.0 mA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Drain−to−Source On Resistance

Forward Transconductance

CAPACITANCES

VGS(TH)

VDS = VGS, ID = 100 mA

0.5

1.0

1.5 V

RDS(on)

VGS = 4.5 V, ID = 154 mA

VGS = 2.5 V, ID = 154 mA

1.4

7.0

W

2.3

7.5

gFS

VDS = 3 V, ID = 154 mA

80

mS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 3)

CISS

COSS

CRSS

VDS = 5.0 V, f = 1 MHz,

VGS = 0 V

11.5 20

10

15 pF

3.5

6.0

Turn−On Delay Time

Rise Time

Turn−Off Delay Time

Fall Time

DRAIN−SOURCE DIODE CHARACTERISTICS

td(ON)

tr

td(OFF)

tf

VGS = 4.5 V, VDS = 5.0 V,

ID = 75 mA, RG = 10 W

13

ns

15

98

ns

60

Forward Diode Voltage

VSD

VGS = 0 V, IS = 154 mA

2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

3. Switching characteristics are independent of operating junction temperatures.

0.77 0.9 V

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