NUP1301U 查看數據表（PDF） - NXP Semiconductors.
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NUP1301U Datasheet PDF : 14 Pages
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Nexperia
NUP1301U
Ultra low capacitance ESD protection array
7. Characteristics
Table 9. Electrical characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
Per diode
VBR
breakdown voltage
VF
forward voltage
IR
reverse current
Cd
diode capacitance
Per device
IR = 100 A
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
VR = 25 V
VR = 80 V
VR = 25 V;
Tj = 150 C
VR = 80 V;
Tj = 150 C
f = 1 MHz; VR = 0 V
100 -
[1]
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
715
855
1
1.25
30
100
25
-
-
35
-
0.6 0.75
VCL
clamping voltage
IPP = 1 A
IPP = 11 A
[2][3] -
-
3
[2][3] -
-
20
[1] Pulse test: tp 300 s; 0.02.
[2] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
[3] Measured from pin 3 to pins 1 and 2 (pins 1 and 2 are connected).
Unit
V
mV
mV
V
V
nA
nA
A
A
pF
V
V
NUP1301U
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 January 2011
© Nexperia B.V. 2017. All rights reserved
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