OM6103ST 查看數據表（PDF） - Omnirel Corp => IRF

零件编号

产品描述 (功能)

生产厂家

OM6103ST

POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-257AA PACKAGE

Omnirel Corp => IRF 

ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)

STATIC P/N OM6103ST / OM6003ST (400V)

Parameter

Min. Typ. Max. Units Test Conditions

BVDSS Drain-Source Breakdown

400

Voltage

V VGS = 0,

ID = 250 mA

VGS(th) Gate-Threshold Voltage

2.0

4.0 V VDS = VGS, ID = 250 mA

IGSS Gate-Body Leakage (OM6103)

± 500 nA VGS = ± 12.8 V

IGSS Gate-Body Leakage (OM6003)

± 100 nA VGS = ± 20 V

IDSS Zero Gate Voltage Drain

0.1 0.25 mA VDS = Max. Rat., VGS = 0

Current

0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0,

TC = 125° C

ID(on) On-State Drain Current1

5.5

A VDS 2 VDS(on), VGS = 10 V

VDS(on) Static Drain-Source On-State

Voltage1

2.4 3.15 V VGS = 10 V, ID = 3.0 A

RDS(on) Static Drain-Source On-State

Resistance1

1.05

VGS = 10 V, ID = 3.0 A

RDS(on) Static Drain-Source On-State

Resistance1

2.0

VGS = 10 V, ID = 3.0 A,

TC = 125 C

ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)

STATIC P/N OM6104ST / OM6004ST (500V)

Parameter

Min. Typ. Max. Units Test Conditions

BVDSS Drain-Source Breakdown

Voltage

VGS(th)

IGSS

IGSS

IDSS

Gate-Threshold Voltage

Gate-Body Leakage (OM6104)

Gate-Body Leakage (OM6004)

Zero Gate Voltage Drain

Current

ID(on)

VDS(on)

On-State Drain Current1

Static Drain-Source On-State

Voltage1

500

V

2.0

4.0 V

± 500 nA

± 100 nA

0.1 0.25 mA

0.2 1.0 mA

4.5

A

VGS = 0,

ID = 250 mA

VDS = VGS, ID = 250 mA

VGS = ± 12.8 V

VGS = ± 20 V

VDS = Max. Rat., VGS = 0

VDS = 0.8 Max. Rat., VGS = 0,

TC = 125° C

VDS 2 VDS(on), VGS = 10 V

3.25 4.00 V VGS = 10 V, ID = 2.5 A

RDS(on) Static Drain-Source On-State

Resistance1

1.6

VGS = 10 V, ID = 2.5 A

RDS(on) Static Drain-Source On-State

Resistance1

2.9 3.3

VGS = 10 V, ID = 2.5 A,

TC = 125 C

DYNAMIC

gfs

Forward Transductance1

3.0 3.6

Ciss Input Capacitance

700

Coss Output Capacitance

70

Crss Reverse Transfer Capacitance

20

td(on) Turn-On Delay Time

18

tr

Rise Time

20

td(off) Turn-Off Delay Time

40

tf

Fall Time

25

S(W )

pF

pF

pF

VDS 2 VDS(on), ID = 3.0 A

VGS = 0

VDS = 25 V

f = 1 MHz

ns VDD = 175 V, ID @ 3.0 A

ns Rg = 10 W ,VGS = 10 V

ns

ns

DYNAMIC

gfs

Forward Transductance1

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

td(on) Turn-On Delay Time

tr

Rise Time

td(off) Turn-Off Delay Time

tf

Fall Time

2.5 2.8

700

90

30

18

20

42

25

S(W )

pF

pF

pF

VDS 2 VDS(on), ID = 2.5 A

VGS = 0

VDS = 25 V

f = 1 MHz

ns VDD = 225 V, ID @ 2.5 A

ns Rg = 7.5 W , VGS = 10 V

ns

ns

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

IS

Continuous Source Current

(Body Diode)

ISM

Source Current1

(Body Diode)

Modified MOSPOWER

D

- 5.5 A

symbol showing

G

the integral P-N

- 22 A

S

Junction rectifier.

IS

Continuous Source Current

(Body Diode)

ISM

Source Current1

(Body Diode)

Modified MOSPOWER

- 4.5 A

D

symbol showing

G

the integral P-N

- 18 A

Junction rectifier.

S

VSD Diode Forward Voltage1

VSD Diode Forward Voltage1

trr

Reverse Recovery Time

- 1.6 V TC = 25 C, IS = -5.5 A, VGS = 0

- 2.5 V TC = 25 C, IS = -4.5 A, VGS = 0

470

ns TJ = 150 C, IF = IS,

dlF/ds = 100 A/ms

VSD Diode Forward Voltage1

VSD Diode Forward Voltage1

trr

Reverse Recovery Time

- 1.4 V TC = 25 C, IS = -4.5 A, VGS = 0

- 2 V TC = 25 C, IS = -4 A, VGS = 0

430

ns TJ = 150 C, IF = IS,

dlF/ds = 100 A/ms

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.

Share Link: