PACDN009 查看數據表（PDF） - ON Semiconductor
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PACDN009 Datasheet PDF : 7 Pages
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PACDN009
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Units
Supply Voltage (VP − VN)
Diode Forward DC Current (Note 1)
6.0
V
20
mA
Operating Temperature Range
−40 to +85
C
Storage Temperature Range
−65 to +150
C
DC Voltage at any Channel Input
Package Power Rating
(VN − 0.5) to (VP + 0.5)
V
200
mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Only one diode conducting at a time.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Operating Supply Voltage (VP − VN)
Rating
−40 to +85
0 to 5.5
Units
C
V
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
IP
VF
ILEAK
CIN
Supply Current
Diode Forward Voltage
Channel Leakage Current
Channel Input Capacitance
(VP − VN) = 5.5 V
IF = 20 mA
10
mA
0.65
0.95
V
0.1
1.0
mA
@ 1 MHz, VP = 5 V,
VN = 0 V, VIN = 2.5 V
(Note 2)
3
5
pF
VESD
ESD Protection
kV
Peak Discharge Voltage at any
(Note 2)
Channel Input, in System
a) Human Body Model,
(Note 3)
15
MIL−STD−883, Method 3015
b) Contact Discharge per
(Note 4)
8
IEC 61000−4−2
c) Air Discharge per IEC 61000−4−2 (Note 4)
15
VCL
Channel Clamp Voltage
Positive Transients
Negative Transients
@ 15 kV ESD HBM
V
VP + 13.0
VN − 13.0
1. All parameters specified at TA = 25C unless otherwise noted. VP = 5 V, VN = 0 V unless noted.
2. From I/O pins to VP or VN only. VP bypassed to VN with a 0.22 mF ceramic capacitor (see Application Information for more details).
3. Human Body Model per MIL−STD−883, Method 3015, CDischarge = 100 pF, RDischarge = 1.5 kWVP = 5.0 V, VN grounded.
4. Standard IEC 61000−4−2 with CDischarge = 150 pF, RDischarge = 330 W, VP = 5.0 V, VN grounded.
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