PEMD12 查看數據表（PDF） - Philips Electronics

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PEMD12

NPN/PNP resistor-equipped transistors

Philips Electronics 

Philips Semiconductors

NPN/PNP resistor-equipped transistors

Product specification

PEMD12

FEATURES

• 300 mW total power dissipation

• Very small 1.6 mm x 1.2 mm ultra thin package

• Excellent coplanarity due to straight leads

• Replaces two SC-75/SC-89 packaged transistors on

same PCB area

• Reduces required PCB area

• Reduced pick and place costs.

APPLICATIONS

• General purpose switching and amplification

• Inverter and interface circuits

• Circuit driver.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

VCEO

ICM

R1

collector-emitter voltage

peak collector current

bias resistor

R2

bias resistor

MAX. UNIT

50

V

100 mA

47

kΩ

47

kΩ

PINNING

PIN

1, 4

2, 5

6, 3

emitter

base

collector

DESCRIPTION

TR1; TR2

TR1; TR2

TR1; TR2

DESCRIPTION

NPN/PNP resistor-equipped transistor in a SOT666 plastic

package.

MARKING

TYPE NUMBER

PEMD12

MARKING CODE

D2

handbook, ha6lfpage 5

4

6

5

4

R1 R2

TR2

TR1

R2 R1

1

2

3

1

2

3

Top view

MAM448

Fig.1 Simplified outline (SOT666) and symbol.

2, 5

6, 3

MBK120

1, 4

Fig.2 Equivalent inverter symbol.

2001 Nov 07

2

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