PEMD12 查看數據表（PDF） - Philips Electronics
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PEMD12 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN/PNP resistor-equipped transistors
Product specification
PEMD12
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Per transistor for the PNP transistor with negative polarity
ICBO
ICEO
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
RR-----21--
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
saturation voltage
input off voltage
input on voltage
input resistor
resistor ratio
VCB = 50 V; IE = 0
VCE = 50 V; IB = 0
VCE = 30 V; IB = 0; Tj = 150 °C
VEB = 5 V; IC = 0
VCE = 5 V; IC = 5 mA
IC = 10 mA; IB = 0.5 mA
VCE = 5 V; IC = 100 µA
VCE = 0.3 V; IC = 2 mA
Cc
collector capacitance
TR1 (NPN)
TR2 (PNP)
IE = ie = 0; VCB = 10 V;
f = 1 MHz
MIN. TYP. MAX. UNIT
−
−
100 nA
−
−
1
µA
−
−
50
µA
−
−
90
µA
80
−
−
−
−
150 mV
−
1.2 0.8 V
3
1.6 −
V
33
47
61
kΩ
0.8 1
1.2
−
−
2.5 pF
−
−
3
pF
2001 Nov 07
4
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