PHE13005X 查看數據表（PDF） - Unspecified

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PHE13005X

Silicon diffused power transistor

Unspecified 

WeEn Semiconductors

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

VCESM

collector-emitter

peak voltage

VBE = 0 V

VCBO

collector-base voltage

IE = 0 A

VCEO

collector-emitter voltage IB = 0 A

IC

collector current

DC; Fig. 1; Fig. 2; Fig. 3

ICM

peak collector current

IB

base current

IBM

peak base current

Ptot

total power dissipation

Th ≤ 25 °C; Fig. 4

Tstg

storage temperature

Tj

junction temperature

PHE13005X

Silicon diffused power transistor

Values

Unit

700

V

700

V

400

V

4

A

8

A

2

A

4

A

26

W

-65 to 150

°C

150

°C

Tj = Tj (max) °C

Fig. 1. Reverse bias safe operating area

VCL(CE) ≤ 1000V; VCC = 150 V; VBB = - 5 V;

LC = 200 μH; LB = 1 μH

Fig. 2. Test circuit for reverse bias safe operating area

PHE13005X

Product data sheet

All information provided in this document is subject to legal disclaimers.

26 April 2018

© WeEn Semiconductors Co., Ltd. 2018. All rights reserved

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