2SB673 查看數據表（PDF） - New Jersey Semiconductor
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2SB673 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One,
Silicon PNP Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB673
DESCRIPTION
• High DC Current Gain-
: hFE = 2000(Min)@ lc=-3A
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo=-100V(Min)
• Low Collector Saturation Voltage-
:VCE(sat)=-1.5V(Max)@lc=-3A
• Complement to Type 2SD633
APPLICATIONS
• High power switching applications.
• Hammer drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-7
A
IB
Base Current-DC
Collector Power Dissipation
PC
Tic—" 9c;op^
Tj
Junction Temperature
-0.2
A
40
W
150
r
Tstg
Storage Temperature Range
-55-150 'C
T2
1 .'
'"
v >-*~
'R- Vj I
PIH 1 Base
2 Collector
3 Emitter
TO-:!20C package
„ B «-
i
-F
MQ j/r^i
U1
A
t>
T»
* H' ,
' Ij
K
T h*"
G (*-
"*
—t
•
<1
i
DIM
A
B
C
D
F
G
H
J
K
L
Q
R
S
U
V
I
mm
MIN
15.50
9.90
4.20
0.70
3.40
4.98
2.70
0.44
13.20
1.10
2.70
2.50
1.29
6.45
8.66
MAX
15.90
10.20
4.50
0.90
3,70
5.18
2.90
0.60
13.40
1.30
2.90
2.70
1.35
6.65
8.86
NJ Semi-Conduetors reserves the right to change test eonditions. parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. I lovvever. NJ Semi-Conduetors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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