B1382 查看數據表（PDF） - New Jersey Semiconductor
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B1382 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
2SB1382
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
:V(BR)cEo=-120V(Min)
• High DC Current Gain-
: hFE= 2000( Min.) @(lc= -8A, VCE= -4V)
• Low Collector Saturation Voltage-
: VcE<sair -1.5V(Max)@ (lc= -8A, IB= -16mA)
• Complement to Type 2SD2082
APPLICATIONS
• Designed for chopper regulator, DC motor driver and
general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25X:)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Coltector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-6
V
Ic
Collector Current-Continuous
-16
A
ICM
Colleptor Current-Peak
-26
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25'C
Tj
Junction Temperature
TR|g
Storage Temperature
-1
A
75
W
150
X.'
-55-150 "C
2 Collector
3 Et»it t*r
TO-3FHL
mm
DIM MM MAX
A 19.90 20.10
B 15.75 16.10
C 5.50 5.70
D 0.90 1.10
F 3.30 3.50
G 2.90 3.20
H 5.90 6.10
J 0.595 0.70
K 21.10 22.50
L 1.90 2.25
N 10.80 11.00
(j 4.90 5.10
R 3.75 3.95
S 3.20 3.60
U 9.90 10.10
V 4.:o 4.90
Z 1 190 2.10
VI Semi-Cnndiictors reserves the right to change tost conditions, parameter limits and package dimensions without
notice. Information furnished hy N.I Scini-fonductors is helie\ed to he hoth accurnte and reliable at Hie liiiK- nfgoin
lo piv^ I luuc\a-. M Seini-Condnclors assumes no rosponsihilit> lor anv errors or oinis>ion> discovered m its i"ise.
XI Si-mi-Cmidiiciors cnculirajics cu-.lonici> lo \crils lliLit dalavhecN .HV vimx-nt hclore placing orders.
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