B1382 查看數據表（PDF） - New Jersey Semiconductor
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B1382 Datasheet PDF : 2 Pages
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Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj'25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc=-10mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage •• lc=-8A; lB=-16mA
VaF(sat) Base-Emitter Saturation Voltage
lc=-8A, !B=-16nnA
ICBO
Collector Cutoff Current
VCB=-120V; IE=0
IEBO
Emitter Cutoff Current
VEB= -6V; lc= 0
hFE
DC Current Gain
lc= -8A ; VCE= -4V
COB
Output Capacitance
lEsO;VcB=-10V;ftest=1MHz
fi
Current-Gain—Bandwidth Product
Switching Times
lE=1A;VCE=-12V
ton
Turn-on Time
tslg
Storage Time
tf
Fall Time
Vcc- -40V, RL= 50 ,
lc= -8A; !BI= -Ie2= -16mA,
2SB1382
MIN TYP. MAX UNIT
-120
V
-1.5 V
-2.5 V
-10 M A
2000
-10 mA
%
350
PF
50
MHz
0.8
us
1.8
us
1.0
us
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