2SB1253 查看數據表（PDF） - Inchange Semiconductor

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产品描述 (功能)

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2SB1253

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

isc Silicon PNP Darlington Power Transistor

INCHANGE Semiconductor

2SB1253

DESCRIPTION

·High DC Current Gain-

: hFE= 5000(Min)@IC= -5A

·Low-Collector Saturation Voltage-

: VCE(sat)= -2.5V(Max.)@IC= -5A

·Complement to Type 2SD1893

·Minimum Lot-to-Lot variations for robust device performance

and reliable operation

APPLICATIONS

·Designed for power amplifier applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-130

V

VCEO

Collector-Emitter Voltage

-110

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-6

A

ICM

Collector Current-Peak

Collector Power Dissipation

@ TC=25℃

PC

Collector Power Dissipation

@ Ta=25℃

TJ

Junction Temperature

-10

A

50

W

3

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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