2SC3893A 查看數據表（PDF） - Inchange Semiconductor

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2SC3893A

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC3893A

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 200mA; IC= 0

V(BR)CBO Collector-Base Breakdown Voltage

IC= 50μA; IE= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A

VBE(sat) Base-Emitter Saturation Voltage

IC= 6A; IB= 1.5A

ICBO

Collector Cutoff Current

VCB= 500V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE

DC Current Gain

IC= 1A; VCE= 5V

VECF

C-E Diode Forward Voltage

IF= 6A

fT

Current-Gain—Bandwidth Product

IC= 0.1A; VCE= 10V

COB

Output Capacitance

IE= 0; VCB= 10V; ftest=1.0MHz

Switching Times , Resistive load

tstg

Storage Time

tf

Fall Time

ICP= 6A, IB1= 1.2A; IB2= -2.4A;

RL= 33.3Ω

5

V

1500

V

5.0

V

1.5

V

10 μA

66

200 mA

8

2.0

V

3

MHz

210

pF

2.5 μs

0.2 μs

isc website：www.iscsemi.com

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