2SC4830 查看數據表（PDF） - New Jersey Semiconductor
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2SC4830 Datasheet PDF : 2 Pages
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, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC4830
\\N
• High Breakdown Voltage-
: VCBO= 1500V(Min)
• High Switching Speed
• Low Saturation Voltage
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APPLICATIONS
• Horizontal deflection output for high resolution display.
• High speed switching power supply output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
6
A
I CM
Collector Current-Peak
12
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25°C
Tj
Junction Temperature
3
A
50
W
150
°C
Tstg
Storage Temperature Range
-55-150
'C
,
123
2. COLLECTOR
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DIM WIN MAX
A 24.30 24.70
B 15.20 15.80
C 5.20 5.80
D 0,65 0.85
F 3.30 3.90
G 3,90 4.10
H 4..30 4.70
J 0,80 1.00
K 18.30 18.70
L 1,90 2.10
N 10.70 11.10
Q 4.40 4.60
R 3,30 3.70
S 3.20 3.40
u 9.50 9.70
Y 1.90 2.10
Z 1.40 1.EO
\ Semi-Conductors reserves the right lo change test conditions, parameter limits and package dimensions uithout
notice. Information furnished by N.I Seini-Conduetors is believed to he both accurate and reliable at the time of going
to press. I louever. N.I Semi-Conductors assumes no responsibility for an> errors or omissions discovered in its use.
N'.l Semi-C'(inductors enauirajies customers to verily ihul datasheets are current before phicing orders.
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