2SC4830 查看數據表（PDF） - New Jersey Semiconductor
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2SC4830 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
2SC4830
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VcE(sat) Collector-Emitter Saturation Voltage |C=4A;IB= 1A
VeE(sat) Base-Emitter Saturation Voltage
lc= 4A; IB= 1A
ICBO
Collector Cutoff Current
VCB=1500V;IE=0
5.0
V
1.5
V
1.0 mA
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
10
uA
hpE-1
DC Current Gain
lc=1A;VCE=5V
8
hFE-2
DC Current Gain
lc= 4A; VCE= 5V
4
8
fr
Current-Gain—Bandwidth Product
lc=0.1A; VCE= 10V
3
MHz
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
175
PF
Switching Times; Resistive Load
Utg
Storage Time
tf
Fall Time
lc= 4A; lBi= 0.8A; IB2=-1.6A;
RL= 51 0
2.5
ns
0.2
VS
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