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2SC3076(2002) 查看數據表(PDF) - Toshiba

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2SC3076 Datasheet PDF : 5 Pages
1 2 3 4 5
2SC3076
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
VCB = 50 V, IE = 0
VEB = 5 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
hFE (1)
(Note)
VCE = 2 V, IC = 0.5 A
hFE (2)
VCE (sat)
VBE (sat)
VCE = 2 V, IB = 1.5 A
IC = 1 A, IB = 0.05 A
IC = 1 A, IB = 0.05 A
fT
VCE = 2 V, IC = 0.5 A
Cob
VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
1.0
µA
1.0
µA
50
V
70
240
40
0.5
V
1.2
V
80
MHz
30
pF
Turn-on time
Switching time Storage time
ton
20 µs
IB1
OUTPUT
0.1
0
INPUT
tstg
IB2 IB2
1.0
µs
VCC = 30 V
Fall time
tf
IB1 = IB2 = 0.05 A,
DUTY CYCLE 1%
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
0.1
Marking
C3076
Product No.
Lot No.
hFE Classification
Explanation of Lot No.
Month of manufacture: January to December are denoted by letters A to L respectively.
Year of manufacture: last decimal digit of the year of manufacture
2
2002-07-23

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