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2SC3076(2002) 查看數據表(PDF) - Toshiba

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2SC3076 Datasheet PDF : 5 Pages
1 2 3 4 5
IC – VBE
2.0
Common emitter
VCE = 2 V
1.5
1.0
0.5
Tc = 100°C 25
55
0
0
0.4
0.8
1.2
1.6
Base-emitter voltage VBE (V)
Safe Operating Area
5
IC max (pulsed)*
3
IC max (continuous)
1 ms*
10 ms*
1
DC operation
Tc = 25°C
100 ms*
0.5
0.3
0.1
0.05 *: Single nonrepetitive pulse
Tc = 25°C
0.03 Curves must be derated
linearly with increase in
temperature.
VCEO max
0.01
0.5 1
35
10
30 50 100
Collector-emitter voltage VCE (V)
2SC3076
12
(1)
10
8
PC – Ta
(1) Tc = Ta infinite heat sink
(2) Ceramic substrate
50 × 50 × 0.8 mm
(3) No heat sink
6
4
(2)
2
(3)
0
0
25
50
75 100 125 150 175
Ambient temperature Ta (°C)
4
2002-07-23

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